Faster 16Gb NAND Flash Memory Coming Soon from Samsung

Samsung Electronics Co., Ltd. announced that it is now sampling its 16Gb NAND flash memory with customers--the first NAND flash using a 50 nanometer (nm) process technology. The first samples of this high density NAND flash memory have a multi-level cell (MLC) design with a 4Kbyte (KB) page size to enhance both its read and write features. The new 4KB page function improves the conventional 2KB paging system for MLC NAND flash to double the read speed, while increasing write performance 150%.

Early market introduction of 16Gb and higher density NAND flash memories also is expected to accelerate the adoption of non-volatile memory applications such as flash-based solid state disks. Samsung plans to begin mass producing its 16Gb NAND flash memory in the first quarter of 2007. [Bill Fox]