Samsung Announced Faster and Denser RAM in Sample Production Runs

Samsung Electronics announced sample production of the next-generation memory module for servers and workstations - a fully buffered, dual in-line memory module (FB DIMM) based on DDR2 technology. The FB DIMM sharply boosts memory density and bandwidth of registered DIMMs to improve data processing.

An Advanced Memory Buffer (AMB) chip has been added to each memory module to enable the use of high - and low-speed interfaces. The buffer can generate speeds from 3.2Gigabits per second (Gbps) to 4.8Gbps. The FB DIMM can attain a maximum speed of 4.8Gbps that is double the speed of a DDR2-400 registered DIMM, when utilizing DDR2-800 components.

The new FB DIMM also increases system efficiencies as board design is facilitated due to minimal circuiting. In addition, it prevents errors from occurring in conventional server systems when the number of memory modules exceeds two per channel. With FB DIMMs, servers can increase density levels eight-fold as the DIMM retrieves and stores data in a serial process.

Samsung's 512MB and 1GB FB DIMM samples comply with existing industry (JEDEC) standards. [Bill Fox]